SCOPUS 정보 검색 플랫폼

Progress in Crystal Growth and Characterization of Materials

Volumn 48-49, Issue 1-3 SPEC. ISS., 2004, Pages 42-103

Molecular beam epitaxy growth of GaN, AlN and InN

(2) Wang, Xinqiang a Yoshikawa, Akihiko a

Author keywords

A1: Quantum dots; A1: Quantum wells; A3: Molecular beam epitaxy; A3: Thin films; B1: Nitrides; B2: Semiconducting III V materials

Indexed keywords

ALUMINUM NITRIDE; DOPING (ADDITIVES); GALLIUM NITRIDE; GROWTH KINETICS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS; ULTRAVIOLET DETECTORS;

GROWTH CONTROL; GROWTH PARAMETERS; QUANTUM STRUCTURES; SEMICONDUCTING III-V MATERIALS;

MOLECULAR BEAM EPITAXY;

EID: 23844519653 PISSN: 09608974 EISSN: None Source Type: Journal
DOI: 10.1016/j.pcrysgrow.2005.03.002 Document Type: Review

Times cited : (165)

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