MBE growth and doping of III-V nitrides

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 349-353

  Ng, H M ^a   Doppalapudi, D ^a   Korakakis, D ^a   Singh, R ^a   Moustakas, T D ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

Doping; GaN; Growth

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; NITRIDING; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ACCEPTOR CENTERS;

SEMICONDUCTING FILMS;

EID: 0032094294     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00291-7     Document Type: Article

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