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Physical Review B - Condensed Matter and Materials Physics
Volumn 64, Issue 19, 2001, Pages 1954061-19540612
Surfactant effect of gallium during molecular-beam epitaxy of GaN on AIN (0001)
(5)
Mula, Guido
a,b
Adelmann, C
a
Moehl, S
a
Oullier, J
a
Daudin, B
a
a
CEA GRENOBLE
(
France
)
b
UNIVERSITY OF CAGLIARI
(
Italy
)
Author keywords
[No Author keywords available]
Indexed keywords
ALUMINUM DERIVATIVE; GALLIUM; NITROGEN DERIVATIVE; SURFACTANT;
ADSORPTION; ARTICLE; CHEMICAL ANALYSIS; ELASTICITY; ELECTRON DIFFRACTION; ENERGY; HIGH TEMPERATURE; MOLECULE; STOICHIOMETRY;
EID
:
0035891198
PISSN
:
01631829
EISSN
:
None
Source Type
:
Journal
DOI
:
None
Document Type
:
Article
Times cited : (
140
)
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