Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by ECR-assisted MBE

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 1104-1109

  Yodo, T ^a   Ando, H ^a   Nosei, D ^a   Harada, Y ^a   Tamura, M ^b  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL ORIENTATION; GALLIUM NITRIDE; GRAIN GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SUBSTRATES; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

HETEROEPITAXIAL LAYERS;

MOLECULAR BEAM EPITAXY;

EID: 0036530532     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02099-1     Document Type: Article

References (8)