Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap

Physica Status Solidi (B) Basic Research

Volumn 229, Issue 3, 2002, Pages r1-r3

  Davydov, V Yu ^a   Klochikhin, A A ^a   Seisyan, R P ^a   Emtsev, V V ^a   Ivanov, S V ^a   Bechstedt, F ^b   Furthmuller J ^b   Harima, H ^c   Mudryi, A V ^d   Aderhold, J ^e   Semchinova, O ^e   Graul, J ^e  

^a IOFFE INSTITUTE   (Russian Federation)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^d INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^e LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS;

ABSORPTION AND EMISSIONS; FUNDAMENTAL BAND GAP;

ENERGY GAP;

EID: 4244203187     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200202)229:33.0.CO;2-O     Document Type: Article

References (13)