Faceted inversion domain boundary in GaN films doped with Mg

Applied Physics Letters

Volumn 77, Issue 16, 2000, Pages 2479-2481

  Romano, L T ^a   Northrup, J E ^a   Ptak, A J ^b   Myers, T H ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b WEST VIRGINIA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000369248     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1318731     Document Type: Article

References (11)

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7. T. H. Myers, A. Ptak, L. T. Romano, J. E. Northrup, and C. G. Van de Walle, unpublished.
8. L. T. Romano, J. E. Northrup, and M. A. O'Keefe, Appl. Phys. Lett. 69, 2394 (1996).
9. J. M. Zuo, CBED Simulation Program, Arizona State University.
10. R. Stumpf and M. Scheffler, Comput. Phys. Commun. 79, 447 (1994). The plane wave cutoff energy used in these calculations is 40 Ry.
11. The construction of a (1123) boundary structure that satisfies the electron counting rule requires replacement of 3/4 of the Ga atoms by Mg. Calculations for such structure would require the use of a unit cell containing 12 threefold atoms.