Morphological properties of GaN quantum dots doped with Eu

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2247-2249

  Hori, Y ^a   Jalabert, D ^a   Andreev, T ^a   Monroy, E ^a   Tanaka, M ^b   Oda, O ^b   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; EUROPIUM; LIGHT EMITTING DIODES; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ADATOMS; IMPINGING MATERIALS; X-RAY ABSORPTION FINE STRUCTURES (EXAFS);

SEMICONDUCTOR QUANTUM DOTS;

EID: 2142645130     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690467     Document Type: Article

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