Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 9638-9645

  Adelmann, C ^a   Brault, J ^a   Jalabert, D ^a   Gentile, P ^a   Mariette, H ^a   Mula, Guido ^a   Daudin, B ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GA FLUX; GAN GROWTH; GROWTH CONDITIONS; GROWTH OF GAN; GROWTH WINDOW; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SUBSTRATE TEMPERATURE; SURFACE COVERAGES;

EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAMS;

GALLIUM ALLOYS;

EID: 0037098087     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471923     Document Type: Article

References (21)

1. E. J. Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 82, 5472 (1997). jap JAPIAU 0021-8979
2. B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J. Appl. Phys. 88, 1855 (2000). jap JAPIAU 0021-8979
3. B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, Appl. Phys. Lett. 77, 2885 (2000). apl APPLAB 0003-6951
4. T. Zywietz, J. Neugebauer, and M. Scheffler, Appl. Phys. Lett. 73, 487 (1998). apl APPLAB 0003-6951
5. T. Zywietz, J. Neugebauer, M. Scheffler, J. E. Northrup, H. Chen, and R. M. Feenstra (unpublished).
6. C. Kruse, S. Einfeldt, T. Böttcher, D. Hommel, D. Rudloff, and J. Christen, Appl. Phys. Lett. 78, 3827 (2001). apl APPLAB 0003-6951
7. A. R. Smith, R. M. Feenstra, D. W. Greve, M. S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, J. Vac. Sci. Technol. B 16, 2242 (1998). jvb JVTBD9 0734-211X
8. G. Mula, C. Adelmann, S. Moehl, J. Oullier, and B. Daudin, Phys. Rev. B 64, 195406 (2001). prb PRBMDO 0163-1829
9. J. E. Northrup, J. Neugebauer, R. M. Feenstra, and A. R. Smith, Phys. Rev. B 61, 9932 (2000). prb PRBMDO 0163-1829
10. C. Adelmann, R. Langer, G. Feuillet, and B. Daudin, Appl. Phys. Lett. 75, 3518 (1999). apl APPLAB 0003-6951
11. L. X. Zheng, M. H. Xie, and S. Y. Tong, Phys. Rev. B 61, 4890 (2001). prb PRBMDO 0163-1829
12. M. Zinke-Allmang, L. C. Feldman, and M. H. Grabow, Surf. Sci. Rep. 16, 377 (1992). ssr SSREDI 0167-5729
13. S. Guha, N. A. Bojarczuk, and D. W. Kisker, Appl. Phys. Lett. 69, 2879 (1996). apl APPLAB 0003-6951
14. N. Grandjean, J. Massies, F. Semond, S. Y. Karpov, and R. A. Talalaev, Appl. Phys. Lett. 74, 1854 (1999). apl APPLAB 0003-6951
15. O. Briot, in Group III Nitride Semiconductor Compounds, edited by B. Gil (Oxford University Press, Oxford, 1998), p. 73.
16. Z. Liliental-Weber, Y. Chen, S. Ruvimov, and J. Washburn, Phys. Rev. Lett. 79, 2835 (1997). prl PRLTAO 0031-9007
17. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, Appl. Phys. Lett. 72, 710 (1998); apl APPLAB 0003-6951
18. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, 72, 692 (1998). apl APPLAB 0003-6951
19. J. E. Northrup and J. Neugebauer, Phys. Rev. B 60, R8473 (1999). prb PRBMDO 0163-1829
20. V. G. Bhide, Physica (Amsterdam) 24, 817 (1958). phy PHYSAG 0031-8914
21. W. Qian, K. Skowronski, M. de Graef, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 66, 1252 (1995). apl APPLAB 0003-6951