GaN and AlxGa1-xN molecular beam epitaxy monitored by reflection high-energy electron diffraction

Applied Physics Letters

Volumn 71, Issue 13, 1997, Pages 1816-1818

  Grandjean, N ^a   Massies, J ^a  

^a CRHEA CNRS   (France)

Author keywords

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Indexed keywords

EID: 5944262503     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119408     Document Type: Article

References (20)

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20. The lattice mismatch reaches only 2% after 50 Å of GaN growth (the expected value being 2.5%). Actually, after islanding the lattice mismatch relaxation evolves slowly. The reason could be the presence of islands free-edges. Indeed, they are able to relax a part of the elastic energy delaying by this way the dislocation formation.