GaN quantum dots by molecular beam epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 540-545

  Daudin, B ^a   Adelmann, C ^a   Gogneau, N ^a   Sarigiannidou, E ^a   Monroy, E ^a   Fossard, F ^a   Rouviere J L ^a  

^a CEA GRENOBLE   (France)

Author keywords

GaN; Plasma assisted MBE; Quantum dots

Indexed keywords

ALUMINUM NITRIDE; ELASTICITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PLASMA APPLICATIONS; PLASTICITY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; THERMOCOUPLES;

ELASTIC STRAIN; PLASMA ASSISTED MBE;

GALLIUM NITRIDE;

EID: 1642265307     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.075     Document Type: Conference Paper

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