GaN epilayers on misoriented substrates

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 235-238

  Trager Cowan, C ^a   McArthur, S ^a   Middleton, P G ^a   O'Donnell, K P ^a   Zubia, D ^b   Hersee, S D ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRON EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; THICK FILMS;

BOUND EXCITON EMISSION; GALLIUM NITRIDE EPILAYERS; PHOTOLUMINESCENCE SPECTROSCOPY; YELLOW BAND EMISSION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528967     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00373-0     Document Type: Article

References (18)

1. Briot O. Gil B. Group III Nitride Semiconductor Compounds: Physics and Applications. 1998;70 Oxford University Press, London.
2. Kim J.S., Suh S.H., Kim C.H., Chung S.J. J. Appl. Phys. 81:1997;6107.
3. Kasu M., Saito H., Fukui T. J. Cryst. Growth. 115:1991;406.
4. T. Ohno, Y. Kawaguchi, A. Ohki, T. Matsuoka, Jpn. J. Appl. Phys. Part 1 33 (1994) 5766.
5. Hersee S.D., Ramer J., Zheng K., Kranenberg C., Malloy K., Banas M., Goorsky M. J. Elec. Mat. 24:1995;1519.
6. Middleton P.G., Trager-Cowan C., O'Donnell K.P., Cheng T.S., Hooper S.E., Foxon C.T. Mater. Sci. Eng. B. 43:1997;154.
7. Trager-Cowan C., Middleton P.G., O'Donnell K.P., Cheng T.S., Hooper S.E., Foxon C.T. MRS Internet J. Nitride Semicond. Res. 1:1996;6.
8. I. Akasaki, H. Amano, in: J.H. Edgar (Ed.) Properties of Group III Nitrides, INSPEC, London, 1994.
9. Meyer B.K., Hoffman A., Thurian P. Gil B. Group III Nitride Semiconductor Compounds: Physics and Applications. 1998;242 Oxford University Press, London.
10. P.G. Middleton, K.P. O'Donnell, C. Trager-Cowan, D. Cole, M. Cazzanelli, J. Lunney, Mater. Sci. Eng. B, (same volume).
11. Fischer S., Wetzel C., Walukiewicz W., Haller E.E. Mat. Res. Soc. Symp. Proc. 395:1996;571.
12. Salviati G., Zanotti-Fregonara C., Albrecht M et al. Inst. Phys. Conf. Ser. 157:1997;199.
13. Shreter Y.G., Rebane Y.T., Davis T.J. et al. Mat. Res. Soc. Symp. Proc. 449:1997;683.
14. Grandjean N., Leroux M., Laügt M., Massies J. App. Phys. Lett. 71:1997;240.
15. Kornitzer K., Mayer M., Mundbrod M., Thonke K., Pelzmann A., Kamp M. Mat. Sci. Forum. 258:1997;1113.
16. Turnbull D.A., Li X., Gu S.Q., Reuter E.E., Coleman J.J., Bishop S.G. J. Appl. Phys. 80:1996;4609.
17. Song J.J., Shan W. Gil B. Group III Nitride Semiconductor Compounds: Physics and Applications. 1998;182 Oxford University Press, London.
18. Sasaki T., Zembutsu S. J. Appl. Phys. 61:1987;2533.