Growth and applications of group III-nitrides

Journal of Physics D: Applied Physics

Volumn 31, Issue 20, 1998, Pages 2653-2710

  Ambacher, O ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PLASMA APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; THERMODYNAMIC STABILITY;

ALUMINUM NITRIDE; CHEMICAL STABILITY; GALLIUM NITRIDE; INDIUM NITRIDE; NITRIDE FILMS; PLASMA INDUCED MOLECULAR BEAM EPITAXY;

CRYSTAL GROWTH;

EID: 0032181962     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/20/001     Document Type: Review

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