Growth and optical properties of epitaxial GaN films on Si(1 1 1) using single gas-source molecular beam epitaxy

Thin Solid Films

Volumn 434, Issue 1-2, 2003, Pages 106-111

  Torrison, Levi ^a   Tolle, John ^a   Tsong, Ignatius S T ^a   Kouvetakis, John ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

GaN; Nanostructures; Optical materials; Single source MBE

Indexed keywords

CATHODOLUMINESCENCE; CRYSTALLINE MATERIALS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; STOICHIOMETRY; THERMODYNAMICS;

PRECURSORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037939736     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00461-9     Document Type: Article

References (13)

1. Strite H., Morcoc S.H.J. J. Vac. Sci. Technol. B. 10:1992;1237.
2. Jones A.C., Whitehouse C.R., Roberts J.S. Chem. Vap. Deposition. 3:1995;65.
3. Neumayer D.A., Eckerdt J.G. Chem. Mater. 8:1996;9.
4. Hwang J.W., Campbell J., Kozubowski J., Hanson A.S., Evans J.F., Gladfelter W.L. Chem. Mater. 7:1995;517.
5. Kouvetakis J., Beach D.B. Chem. Mater. 1:1989;476.
6. McMurran J., Dai D., Steffek C., Balasubramanian B., Hubbard J., Kouvetakis J. Inorg. Chem. 7:1998;6638.
7. McMurran J., Hubbard J.L., Nesting D.C., Smith D.J., Kouvetakis J. J. Am. Chem. Soc. 120:1998;5233.
8. McMurran J., Smith D.J., Kouvetakis J. Appl. Phys. Lett. 74:1999;884.
9. Tolle J., Roucka R., Tsong I.S.T., Crozier P., Chizmeshya A.V.G., Kouvetakis J. Appl. Phys. Lett. 81:2002;2181.
10. Tolle J., Roucka R., Chizmeshya A.V.G., Crozier P.A., Smith D.J., Tsong I.S.T., Kouvetakis J. Solid State Sci. 4:2002;1509.
11. Song J.J., Shan W. Gil B. Group III Nitride Semiconductor Compounds: Physics and Applications. 1998;182 Clarendon Press, New York.
12. Fisher S., Wetzel C., Haller E.E., Meyer B.K. Appl. Phys. Lett. 67:1995;1298.
13. As D.J., Kohler U. J. Phys.: Condens. Matter. 13:2001;8923.