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Current Applied Physics

Volumn 2, Issue 4, 2002, Pages 305-310

Polarity control in MBE growth of III-nitrides, and its device application

(4) Okumura, Hajime a Shimizu, Mitsuaki a Qiang Shen, Xu a Ide, Toshihide a

a National Institute of Advanced Industrial Science and Technology (Japan)

Author keywords

III nitride; Lattice polarity; Plasma assisted molecular beam epitaxy; Quality improvement

Indexed keywords

EID: 0036697530 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/S1567-1739(02)00114-1 Document Type: Article

Times cited : (15)

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