Violet InGaN/GaN/AlGaN-based laser diodes operable at 50 °C with a fundamental transverse mode

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 3 A, 1999, Pages

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Nagahama, Shin ichi ^a   Matsushita, Toshio ^a   Kiyoku, Hiroyuki ^a   Sugimoto, Yasunobu ^a   Kozaki, Tokuya ^a   Umemoto, Hitoshi ^a   Sano, Masahiko ^a   Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; EPITAXIAL GROWTH; HETEROJUNCTIONS; LASER MODES; MIRRORS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; SEPARATE-CONFINEMENT HETEROSTRUCTURE (SCH) LASER DIODES;

QUANTUM WELL LASERS;

EID: 0032635193     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l226     Document Type: Article

References (16)