Properties of cubic (In,Ga)N grown by molecular beam epitaxy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 73-79

  Brandt, Oliver ^a   Müllhaüser, Jochen R ^a   Trampert, Achim ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; ENERGY GAP; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

LOCALIZED STATE; QUASI CONTINUOUS DENSITY OF STATE; REFLECTANCE SPECTROSCOPY; TRANSMITTANCE SPECTROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0345102510     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00367-5     Document Type: Article

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