Threading dislocations in epitaxial lnN thin films grown on (0001) sapphire with a GaN buffer layer

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2817-2819

  Lu, C J ^a,c   Bendersky, L A ^a   Lu, Hai ^b   Schaff, William J ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

^c HUBEI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

THREADING DISLOCATIONS (TD);

THIN FILMS;

EID: 0142229556     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616659     Document Type: Article

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