Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/ (In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

Applied Physics Letters

Volumn 75, Issue 25, 1999, Pages 4019-4021

  Brandt, O ^a   Muralidharan, R ^a   Waltereit, P ^a   Thamm, A ^a   Trampert, A ^a   Von Kiedrowski, H ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000789655     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125524     Document Type: Article

References (13)

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