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Volumn 251, Issue 1-4, 2003, Pages 487-493

Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1 1̄ 0 0) and (0 0 0 1) GaN

(14) Bhattacharyya, A a Friel, I b Iyer, S a Chen, T C a Li, W a Cabalu, J a Fedyunin, Y a Ludwig Jr , K F b Moustakas, T D a Maruska, H P c Hill, D W c Gallagher, J J c Chou, M C c Chai, B c

a Boston University (United States)

b Boston University (United States)

c Crystal Photonics Inc Sanford (United States)

Author keywords

A1. Photoluminescence; A1. X ray diffraction; A3. Chloride vapor phase epitaxy; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

CHLORIDE VAPOR PHASE EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037382839 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)02433-8 Document Type: Conference Paper

Times cited : (30)

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