The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 69, Issue 24, 1996, Pages 3626-3628

  Grudowski, P A ^a   Holmes, A L ^a   Eiting, C J ^a   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; EXCITONS; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH;

BAND EDGE PEAK INTENSITY; BAND EDGE TO YELLOW BAND INTENSITY; GALLIUM NITRIDE; SUBSTRATE MISORIENTATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030577282     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117004     Document Type: Article

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