Growth and characterization of cubic GaN

Journal of Crystal Growth

Volumn 178, Issue 1-2, 1997, Pages 113-133

  Okumura, H ^a   Ohta, K ^b   Feuillet, G ^a,d   Balakrishnan, K ^a   Chichibu, S ^c   Hamaguchi, H ^c   Hacke, P ^a   Yoshida, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

^d CEA GRENOBLE   (France)

Author keywords

Cubic; GaN; MBE; Optical properties; TEM; XRD

Indexed keywords

AMMONIA; HYDRAZINE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY; FILM GROWTH; NITRIDES; NITROGEN; SEMICONDUCTOR GROWTH;

CUBIC GALLIUM NITRIDES; DIMETHYLHYDRAZINE; PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031150312     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00084-5     Document Type: Article

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