High quality GaN-InGaN heterostructures grown on (111) silicon substrates

Applied Physics Letters

Volumn 69, Issue 23, 1996, Pages 3566-3568

  Yang, J W ^a   Sun, C J ^a   Chen, Q ^a   Anwar, M Z ^a   Asif Khan, M ^a   Nikishin, S A ^b   Seryogin, G A ^b   Osinsky, A V ^b   Chernyak, L ^b   Temkin, H ^b   Hu, Chimin ^c   Mahajan, S ^c  

^a APA Inc   (United States)

^b Department of Civil and Environmental Engineering   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000573530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117247     Document Type: Article

References (16)

1. For recent reviews see S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992); H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994) and references therein.
2. For recent reviews see S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992); H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994) and references therein.
3. S. Strite, J. Ruan, Z. Li, N. Manning, A. Salvador, H. Chen, D. J. Smith, W. J. Choyke, and H. Morkoc, J. Vac. Sci. Technol. B 9, 1924 (1991).
4. H. Yang, O. Brandt, M. Wassermeier, J. Behrend, H. P. Schonherr, and K. H. Ploog, Appl. Phys. Lett. 68, 244 (1996).
5. T. Lei, T. D. Moustakas, R. J. Graham, Y. He, and S. J. Berkowitz, J. Appl. Phys. 71, 4933 (1992).
6. H. Liu, A. C. Frenkel, J. G. Kim, and R. M. Park, J. Appl. Phys. 74, 6124 (1993).
7. J. N. Kuznia, J. W. Wang, Q. C. Chen, S. Krishnakutty, M. Asif Khan, T. George, and J. Frietas, Jr., Appl. Phys. Lett. 65, 2407 (1994).
8. S. A. Nikishin, V. G. Antipov, S. S. Ruvimov, G. A. Seryogin, and H. Temkin (unpublished).
9. Z. Yang, F. Guarin, I. W. Tao, W. I. Wang, and S. S. Iyer, J. Vac. Sci. Technol. B 13, 789 (1995).
10. V. G. Antipov, R. V. Kallion, S. A. Nikishin, and D. V. Sinyavski, Sov. Tech. Phys. Lett. 16, 752 (1990).
11. C. Hu, S. Mahajan, S. A. Nikishin, G. A. Seryogin, H. Temkin, J. W. Yang, C. J. Sun, Q. Chen, M. Z. Anwar, and M. Asif Kahn (unpublished).
12. K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi, and K. Oki, J. Cryst. Growth 115, 628 (1991).
13. C. J. Sun, J. W. Yang, Q. Chen, B. W. Lim, M. Zubair Anwar, M. Asif Khan, H. Temkin, D. Weismann, and I. Brenner, Appl. Phys. Lett. 69, 668 (1996).
14. D. S. H. Chan, V. K. S. Ohg, and J. C. H. Phang, IEEE Trans. Electron Devices 42, 963 (1995).
15. A. Jakubowich, R. Tenne, M. Wolf, A. Wold, and D. Mahalu, Phys. Rev. B 40, 2992 (1989).
16. L. Chernyak, A. Osinsky, H. Temkin, J. W. Yang, Q. Chen, and M. Asif Kahn, Appl. Phys. Lett. 69, 2531 (1996).