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Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 311-317

Initial growth of hexagonal GaN grown on an Si(111) substrate coated with an ultra-thin SiC buffer layer

(3) Wang, D a Yoshida, S b Ichikawa, M a

a JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

b FURUKAWA ELECTRIC CO LTD (Japan)

Author keywords

A1. Defects; A1. Photoluminescence; A1. Transmission electron microscopy; A3. Molecular beam epitaxy

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; LUMINESCENCE; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NUCLEATION; SILICON CARBIDE; STACKING FAULTS; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ULTRA THIN BUFFER LAYERS;

SEMICONDUCTING FILMS;

EID: 0036498894 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02220-5 Document Type: Article

Times cited : (3)

References (24)

1
- 0031696454
- (1998) Appl. Phys. Lett. , vol.72 , pp. 415
- Guha, S.¹ Bojarczuk, N.A.²

2
- 0001175737
- (2000) Appl. Phys. Lett. , vol.76 , pp. 273
- Yang, J.W.¹ Lunev, A.² Simin, G.³ Chitnis, A.⁴ Shatalov, M.⁵ Khan, M.A.⁶ Van Nostrand, J.E.⁷ Gaska, R.⁸

3
- 0035831836
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2211
- Dadgar, A.¹ Christen, J.² Riemann, T.³ Richter, S.⁴ Blaesing, J.⁵ Diez, A.⁶ Krost, A.⁷ Alam, A.⁸ Heuken, M.⁹

4
- 0035831846
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2172
- Deelmann, P.W.¹ Bicknell-Tassius, R.N.² Nikishin, S.³ Kuryatkov, V.⁴ Temkin, H.⁵

5
- 0032091463
- (1998) Jpn. J. Appl. Phys. , vol.37
- Hiroyama, Y.¹ Tamura, M.²

6
- 0001422057
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2394
- Romano, L.T.¹ Northrup, J.E.² O'Keefe, M.A.³

7
- 0001544371
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1846
- Wang, D.¹ Hiroyama, Y.² Tamura, M.³ Ichikawa, M.⁴ Yoshida, S.⁵

8
- 0035948058
- (2001) Appl. Phys. Lett. , vol.78 , pp. 4145
- Huang, D.¹ Visconti, P.² Jones, K.M.³ Reshchikov, M.A.⁴ Yun, F.⁵ Baski, A.A.⁶ King, T.⁷ Morkoç, H.⁸

9
- 0000535530
- (2000) Phys. Rev. B , vol.61 , pp. 4890
- Zheng, L.X.¹ Xie, M.H.² Tong, S.Y.³

10
- 0001739480
- (1998) Appl. Phys. Lett. , vol.73 , pp. 487
- Zywietz, T.¹ Neugebauer, J.² Scheffler, M.³

11
- 0001528599
- (1997) J. Appl. Phys. , vol.82 , pp. 5472
- Tarsa, E.J.¹ Heying, B.² Wu, X.H.³ Fini, P.⁴ DenBaars, S.P.⁵ Speck, J.S.⁶

12
- 4244083530
- (1997) Phys. Rev. Lett. , vol.79 , pp. 3934
- Smith, A.R.¹ Feenstra, R.M.² Greve, D.W.³ Neugebauer, J.⁴ Northrup, J.E.⁵

13
- 11644265156
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 2242
- Smith, A.R.¹ Feenstra, R.M.² Greve, D.W.³ Shin, M.S.⁴ Skowronski, M.⁵ Neugebauer, J.⁶ Northrup, J.E.⁷

14
- 0034896739
- (2001) Phys. Rev. B , vol.64 , pp. 035305
- Wang, F.¹ Krueger, P.² Pollmann, J.³

15
- 0000291773
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1683
- Wang, D.¹ Hiroyama, Y.² Tamura, M.³ Ichikawa, M.⁴ Yoshida, S.⁵

16
- 0000464763
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2678
- Chien, F.R.¹ Ning, X.J.² Stemmer, S.³ Pirouz, P.⁴ Bremser, M.D.⁵ Davis, R.F.⁶

17
- 21544470068
- (1995) Appl. Phys. Lett. , vol.67 , pp. 410
- Ponce, F.A.¹ Krusor, B.S.² Major, J.S.³ Plano, W.E.⁴ Welch, D.F.⁵

18
- 85010812746
- (1996) Appl. Phys. Lett. , vol.69 , pp. 503
- Neugebauer, J.¹ Van de Walle, C.G.²

19
- 85087605533
- Article 19
- (1996) MRS Internet J. Nitride Semiconductor Res. , vol.1
- Christiansen, S.¹ Albrecht, M.² Dorsch, W.³ Strunk, H.P.⁴ Zànotti-Fregonara, C.⁵ Salviati, G.⁶ Pelzmann, A.⁷ Mayer, M.⁸ Kamp, M.⁹ Ebeling, K.J.¹⁰

20
- 0029732233
- (1996) Appl. Phys. Lett. , vol.68 , pp. 57
- Ponce, F.A.¹ Bour, D.P.² Götz, W.³ Wright, P.J.⁴

21
- 0030975368
- (1997) Nature , vol.386 , pp. 351
- Ponce, F.A.¹ Bour, D.P.²

22
- 0008526511
- (1996) Phys. Stat. Sol. , vol.A158 , pp. 597
- De Mierry, P.¹ Ambacher, O.² Kratzer, H.³ Stutzmann, M.⁴

23
- 0032137873
- (1998) J. Mater. Res. , vol.13 , pp. 2100
- Kang, J.¹ Ogawa, T.²

24
- 0032607794
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2821
- Li, G.¹ Chua, S.J.² Xu, S.J.³ Wang, W.⁴ Li, P.⁵ Beaumont, B.⁶ Gibart, P.⁷

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