Effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's

IEEE Electron Device Letters

Volumn 21, Issue 6, 2000, Pages 268-270

  Green, Bruce M ^a   Chu, Kenneth K ^a   Chumbes, E Martin ^a   Smart, Joseph A ^a   Shealy, James R ^a   Eastman, Lester F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033738001     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.843146     Document Type: Article

References (6)

1. Y.-F. Wu et al., "High Al-content AlGaN/GaN HEMT's on SiC substrates with very high power performance," in IEDM Tech. Dig., Dec. 1999, pp. 925-927.
2. K. K. Chu, J. A. Smart, J. R. Shealy, and L. F. Eastman, "AIGaN/GaN piezoelectric HEMT's with submicron gates on sapphire," in Proc. State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) XXIX, 1998.
3. E. Kohn, I. Daumiller, P. Schmid, N. X. Nguyen, and C. N. Nguyen, "Large signal frequency dispersion of AIGaN/GaN heterostructure field effect transistors," Electron. Lett., vol. 353, pp. 1022-1024, Dec. 1999.
4. S. C. Binari et al., "Fabrication and characterization of GaN FETs," Solid-State Electron., vol. 41, pp. 1549-1554, 1997.
5. J. A. Smart et al., "AlGaN/GaN heterostructures on insulating AlGaN nucleation layers," Appl. Phys. Lett., vol. 75, pp. 388-390, July 1999.
6. T. Prunty et al., "Passivation of AlGaN/GaN heterostructures with silicon nitride,", submitted for publication.