Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2198-2200

  Naranjo, F B ^a   Fernandez S ^a   Sanchez Garcia M A ^a   Calle, F ^a   Calleja, E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BRAGG MIRRORS; EXTERNAL EFFICIENCY; HIGH-QUALITY INTERFACE; HIGH-RESOLUTION X-RAY DIFFRACTION DATA; INGAN/GAN; NI COATING; OUTPUT POWER; RESONANT CAVITY; ROOM TEMPERATURE;

BRAGG REFLECTORS; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAMS; REFLECTION; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956049714     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1463701     Document Type: Article

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