A study of initial growth mechanism of C-GaN on GaAs(1 0 0) by molecular beam epitaxy

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 406-410

  Kimura, Ryuhei ^a   Gotoh, Yutaka ^a   Nagai, Tomonori ^a   Uchida, Yasutaka ^a   Matsuzawa, Takeo ^a   Takahashi, Kiyoshi ^a   Schulz, Carl Gunter ^b  

^a TEIKYO UNIVERSITY OF SCIENCE   (Japan)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Buffer; C GaN; GaAs; MBE; RF plasma

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; NITRIDING; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES;

BUFFER LAYERS; RADIOFREQUENCY (RF) PLASMA;

SEMICONDUCTING FILMS;

EID: 0346940001     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00325-X     Document Type: Article

References (12)

1. S. Yoshida, S. Misawa, S. Gonda, Appl. Phys. Lett. 42 (1983) 427.
2. K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, S. Minagawa, J. Appl. Phys. 79 (1996) 3487.
3. H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, Jpn. J. Appl. Phys. 28 (1989) L2112.
4. M. Mizuta, Jpn. J. Appl. Phys. 25 (1986) L945.
5. H. Okumura, S. Misawa, S. Yoshida, Appl. Phys. Lett. 59 (1991) 1058.
6. K. Wang, D. Pavlidis, J. Singh, J. Appl. Phys. 80 (1996) 1823.
7. Z. Qin, H. Nagano, Y. Sugure, A. Jia, M. Kobayashi, Y. Kato, A. Yoshikawa, K. Takahashi, Proc. 16th Elec. Mater. Symp. (EMS'97), 1997, p. 171.
8. A. Nakadaira, H. Tanaka, Proc. 16th Elec. Mater. Symp. (EMS'97), 1997, p. 173.
9. S. Ritchie, S.R. Johnson, C. Lavoie, J.A. Mackenzie, T. Tiedje, R. Streater, Surf. Sci. 374 (1997) 418.
10. Z. Yu, S.L. Buczkowski, N.C. Giles, T.H. Myers, Appl. Phys. Lett. 69 (1996) 2731.
11. S. Nakamura, N. Isawa, M. Seno, T. Mukai, Jpn. J. Appl. Phys. 31 (1992) 1258.
12. Y. Okamoto, M. Saito, A. Oshiyama, Jpn. J. Appl. Phys. 35 (1996) L807.