Recent progress in growth and physics of GaN/AlN quantum dots

Physica Status Solidi C: Conferences

Volumn 1, Issue 6, 2004, Pages 1445-1450

  Gogneau, N ^a   Enjalbert, F ^b   Fossard, F ^a   Hori, Y ^a   Adelmann, C ^a   Brault, J ^a   Martinez Guerrero, E ^a   Simon, J ^a   Bellet Amalric, E ^a   Jalabert, D ^a   Pelekanos, N ^a   Rouviere J L ^a   Daudin, B ^a   Dang, Le Si ^b   Mariette, H ^b   Monroy, E ^a  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC FIELDS; ELECTRON TRANSITIONS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM WELLS; WETTING;

ARTIFICIAL ATOMS; HETEROEPITAXIAL LAYER; WETTING LAYER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2542623613     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200304083     Document Type: Conference Paper

References (13)

1. Proceedings of the International Conference on Semiconductor Quantum Dots (QD 2000), Munich, Germany (July 31-August 3, 2000), edited by U. Woggon and A. Zrenner, phys. stat. sol. (b) 224, 1-3 (2001).
2. C. Adelmann, J. Brault, J.-L. Rouvière, H. Mariette, Guido Mula, and B. Daudin, J. Appl. Phys. 91, 5498 (2002). C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, Guido Mula, and B. Daudin, J. Appl. Phys. 91, 9638 (2002). N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, and B. Daudib, J. Appl. Phys. 94, 2254 (2003). see also B. Damilano, N. Grandjean, F. Semond, J. Massies, and M. Leroux, Appl. Phys. Lett. 75, 962 (1999).
3. C. Adelmann, J. Brault, J.-L. Rouvière, H. Mariette, Guido Mula, and B. Daudin, J. Appl. Phys. 91, 5498 (2002). C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, Guido Mula, and B. Daudin, J. Appl. Phys. 91, 9638 (2002). N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, and B. Daudib, J. Appl. Phys. 94, 2254 (2003). see also B. Damilano, N. Grandjean, F. Semond, J. Massies, and M. Leroux, Appl. Phys. Lett. 75, 962 (1999).
4. C. Adelmann, J. Brault, J.-L. Rouvière, H. Mariette, Guido Mula, and B. Daudin, J. Appl. Phys. 91, 5498 (2002). C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, Guido Mula, and B. Daudin, J. Appl. Phys. 91, 9638 (2002). N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, and B. Daudib, J. Appl. Phys. 94, 2254 (2003). see also B. Damilano, N. Grandjean, F. Semond, J. Massies, and M. Leroux, Appl. Phys. Lett. 75, 962 (1999).
5. C. Adelmann, J. Brault, J.-L. Rouvière, H. Mariette, Guido Mula, and B. Daudin, J. Appl. Phys. 91, 5498 (2002). C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, Guido Mula, and B. Daudin, J. Appl. Phys. 91, 9638 (2002). N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, and B. Daudib, J. Appl. Phys. 94, 2254 (2003). see also B. Damilano, N. Grandjean, F. Semond, J. Massies, and M. Leroux, Appl. Phys. Lett. 75, 962 (1999).
6. M. Arlery, J. L. Rouvière, F. Widmann, B. Daudin, G. Feuillet, and H. Mariette, Appl. Phys. Lett. 74, 3287 (1999).
7. E. Martinez-Guerrero, C. Adelmann, F. Chabuel, J. Simon, N. T. Pelekanos, G. Mula, B. Daudin, G. Feuillet, and H. Mariette, Appl. Phys. Lett. 77, 809 (2000).
8. F. Widmann, J. Simon, B. Daudin, G. Feuillet, J. L. Rouvière, and N. T. Pelekanos, and G. Fishman, Phys. Rev. B 58, R15989 (1998). see also F. Bernardini and V. Fiorentini, Phys. Rev. B 57, R9427 (1998). M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B 58, R13371 (1998).
9. F. Widmann, J. Simon, B. Daudin, G. Feuillet, J. L. Rouvière, and N. T. Pelekanos, and G. Fishman, Phys. Rev. B 58, R15989 (1998). see also F. Bernardini and V. Fiorentini, Phys. Rev. B 57, R9427 (1998). M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B 58, R13371 (1998).
10. F. Widmann, J. Simon, B. Daudin, G. Feuillet, J. L. Rouvière, and N. T. Pelekanos, and G. Fishman, Phys. Rev. B 58, R15989 (1998). see also F. Bernardini and V. Fiorentini, Phys. Rev. B 57, R9427 (1998). M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B 58, R13371 (1998).
11. J. Simon, N. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, Le Si Dang, and H. Mariette, Phys. Rev. B 68, 035312 (2003). see also P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 1252 (2001).
12. J. Simon, N. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, Le Si Dang, and H. Mariette, Phys. Rev. B 68, 035312 (2003). see also P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 1252 (2001).
13. th International Conference on Nitride Semiconductors, Nara, Japan, May 25-30, 2003.