Effects of film polarities on InN growth by molecular-beam epitaxy

Applied Physics Letters

Volumn 83, Issue 2, 2003, Pages 251-253

  Xu, K ^a   Yoshikawa, A ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

FILM POLARITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0042767997     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592309     Document Type: Article

References (15)

1. H. Lu, W. J. Schaff, J. Hwang, H. Wu, W. Yeo, A. Pharkya, and L. F. Eastman, Appl. Phys. Lett. 77, 2548 (2000).
2. Y. Saito, N. Teraguchi, A. Suzuki, T. Akraki, and Y. Nanishi, Jpn. J. Appl. Phys., Part 2 40, L91 (2001).
3. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002).
4. K. Xu, W. Terashima, T. Hata, N. Hashimoto, Y. Ishitani, and A. Yoshikawa, Phys. Status Solidi C 0, 377 (2002).
5. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
6. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
7. H. Lu, W. J. Schaff, J. Hwang, H. Wu, G. Koley, and L. F. Eastman, Appl. Phys. Lett. 79, 1489 (2001).
8. M. Higashiwaki and T. Matsui, Jpn. J. Appl. Phys., Part 2 41, L540 (2002).
9. Y. Saito, T. Yamaguchi, T. Kanazawa, K. Kano, T. Araki, Y. Nanishi, T. Teraguchi, and A. Suzuki, J. Cryst. Growth 237-239, 1017 (2002).
10. R. M. Feestra, J. E. Northrup, and J. Neugebauer, MRS Internet J. Nitride Semicond. Res. 7, 3 (2002), and related references cited in this letter.
11. D. H. Lim, K. Xu, S. Arima, A. Yoshikawa, and K. Takahashi, J. Appl. Phys. 91, 6461 (2002).
12. About polarity characterization by CAICISS, please see A. Yoshikawa, and K. Xu, Thin Solid Films 412, 38 (2002), and references therein.
13. R. M. Feenstra, Huajie Chen, V. Ramachandran, C. D. Lee, A. R. Smith, J. E. Northrup, T. Zywietz, J. Neugebauer, and D. W. Greve, Surf. Rev. Lett. 7, 601 (2000).
14. B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. Den Baars, U. Mishra, and J. S. Speck, Appl. Phys. Lett. 77, 2885 (2000).
15. K. Xu, N. Hashimoto, T. Hata, W. Terashima, Y. Ishitani, and A. Yoshikawa (unpublished). A qualitative analysis of surface stoichiometry in GaN MOVPE growth by SE can be seen in Y. Taniyasu and A. Yoshikawa, J. Electron. Mater. 30, 1402 (2001).