Step-flow growth of InN on N-polarity GaN template by molecular beam epitaxy with a growth rate of 1.3 μm/h

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 377-381

  Xu, K ^a   Terashima, W ^a   Hata, T ^a   Hashimoto, N ^a   Ishitani, Y ^a   Yoshikawa, A ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HALL MOBILITY; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

BACKGROUND ELECTRON CONCENTRATION; CO-AXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPIES; GROWTH CONDITIONS; IN- SITU MONITORING; SAPPHIRE SUBSTRATES; SUBSTRATE TEMPERATURE; SURFACE STOICHIOMETRY; X RAY ROCKING CURVE;

GROWTH RATE;

EID: 84875089677     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390067     Document Type: Conference Paper

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