Visible-blind GaN Schottky barrier detectors grown on Si(111)

Applied Physics Letters

Volumn 72, Issue 5, 1998, Pages 551-553

  Osinsky, A ^a   Gangopadhyay, S ^a   Yang, J W ^a   Gaska, R ^a   Kuksenkov, D ^b   Temkin, H ^b   Shmagin, I K ^c   Chang, Y C ^c   Muth, J F ^c   Kolbas, R M ^c  

^a APA Optronics   (United States)

^b Texas Tech University   (United States)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SHOT NOISE;

BAND EDGE RELATED EMISSION; GALLIUM NITRIDE; NOISE EQUIVALENT POWER; WURTZITE STRUCTURE;

SEMICONDUCTOR GROWTH;

EID: 0032472608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120755     Document Type: Article

References (13)

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