Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 29-34

  Swartz, Craig H ^a   Tompkins, Randy P ^a   Giles, Nancy C ^a   Myers, Thomas H ^a   Lu, Hai ^b   Schaff, William J ^b   Eastman, Lester F ^b  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b Cornell University   (United States)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting II V materials; B2. Semiconducting indium compounds

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; EPITAXIAL GROWTH; HALL EFFECT; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTOR MATERIALS; SPECTRUM ANALYSIS;

HALL MEASUREMENTS; INTERFACE CONDUCTION; MOBILITY SPECTRA; SEMICONDUCTING II-V MATERIALS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3342884539     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.030     Document Type: Conference Paper

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