Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation

Applied Physics Letters

Volumn 71, Issue 3, 1997, Pages 341-343

  Heinlein, Christian ^a   Grepstad, Jostein ^a   Berge, Torunn ^a   Riechert, Henning ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; HEAT TREATMENT; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDING; NITROGEN; PLASMAS; SAPPHIRE; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE; PLASMA NITRIDATION; RADIO FREQUENCY PLASMA;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031188496     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119532     Document Type: Article

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