Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Applied Physics Letters

Volumn 79, Issue 10, 2001, Pages 1489-1491

  Lu, Hai ^a   Schaff, William J ^a   Hwang, Jeonghyun ^a   Wu, Hong ^a   Koley, Goutam ^a   Eastman, Lester F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347609008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1402649     Document Type: Article

References (7)

1. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
2. E. Bellotti, B. K. Doshi, K. F. Brennan, J. D. Albrecht, and P. P. Ruden, J. Appl. Phys. 85, 916 (1999).
3. B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).
4. B. E. Foutz, O. Ambacher, M. J. Murphy, V. Tilak, and L. F. Eastman, Phys. Status Solidi 216, 415 (1999).
5. T. Tsuchiya, M. Ohnishi, A. Wakahara, and A. Yoshida, J. Cryst. Growth 220, 191 (2000).
6. H. Lu, W. J. Schaff, J. Hwang, H. Wu, W. Yeo, A. Pharkya, and L. F. Eastman, Appl. Phys. Lett. 77, 2548 (2000).
7. S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, J. Appl. Phys. 85, 7682 (1999).