Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Applied Physics Letters

Volumn 79, Issue 10, 2001, Pages 1489-1491

  Lu, Hai ^a   Schaff, William J ^a   Hwang, Jeonghyun ^a   Wu, Hong ^a   Koley, Goutam ^a   Eastman, Lester F ^a  

^a Department of Materials Science and Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347609008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1402649     Document Type: Article

References (7)

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