Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1)

Physica Status Solidi (B) Basic Research

Volumn 230, Issue 2, 2002, Pages

  Davydov, V Yu ^a   Klochikhin, A A ^a   Emtsev, V V ^a   Ivanov, S V ^a   Vekshin, V V ^a   Bechstedt, F ^b   Furthmuller J ^b   Harima, H ^c   Mudryi, A V ^d   Hashimoto, A ^e   Yamamoto, A ^e   Aderhold, J ^f   Graul, J ^f   Haller, E E ^g  

^a IOFFE INSTITUTE   (Russian Federation)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^d INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^e UNIVERSITY OF FUKUI   (Japan)

^f LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^g UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 10844220223     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200204)230:23.0.CO;2-Z     Document Type: Article

References (10)