Effects of the narrow band gap on the properties of InN

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 20, 2002, Pages 2014031-2014034

  Wu, J ^a,b   Walukiewicz, W ^b   Shan, W ^b   Yu, K M ^b   Ager, J W ^b   Haller, E E ^b,c   Lu, Hai ^d   Schaff, William J ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

^d Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM; NITROGEN;

ARTICLE; CALCULATION; CONCENTRATION RESPONSE; CONDUCTANCE; DIELECTRIC CONSTANT; ELECTRON; FILM; INFRARED RADIATION; MASS; MATHEMATICAL ANALYSIS; MEASUREMENT; MODEL; OPTICS; QUANTITATIVE ANALYSIS; SEMICONDUCTOR;

EID: 0037113398     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/physrevb.66.201403     Document Type: Article

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