Red light emission by photoluminescence and electroluminescence from Eu-doped GaN

Applied Physics Letters

Volumn 75, Issue 9, 1999, Pages 1189-1191

  Heikenfeld, J ^a   Garter, M ^a   Lee, D S ^a   Birkhahn, R ^a   Steckl, A J ^a  

^a UNIVERSITY OF CINCINNATI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ENERGY GAP; EUROPIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; THIN FILMS; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032621608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124686     Document Type: Article

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