Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy

Journal of Crystal Growth

Volumn 252, Issue 1-3, 2003, Pages 128-135

  Higashiwaki, Masataka ^a   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

A1. Atomic force microscopy; A1. Carrier density; A1. Hall measurement; A1. Mobility; A3. Molecular beam epitaxy; B1. Indium nitride

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; EPITAXIAL GROWTH; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS;

HALL MEASUREMENT;

SEMICONDUCTING FILMS;

EID: 0037401376     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00918-7     Document Type: Article

References (9)

1. O'Leary S.K., Foutz B.E., Shur M.S., Bhapkar U.V., Eastman L.F. J. Appl. Phys. 83:1998;826.
2. Foutz B.E., O'Leary S.K., Shur M.S., Eastman L.F. J. Appl. Phys. 85:1999;7727.
3. Yamaguchi S., Kariya M., Nitta S., Takeuchi T., Wetzel C., Amano H., Akasaki I. J. Appl. Phys. 85:1999;7682.
4. Mamutin V.V., Vekshin V.A., Davydov V.Yu., Ratnikov V.V., Shubina T.V., Ivanov S.V., Kopev P.S., Karlsteen M., Söderwall U., Willander M. Phys. Stat. Sol. A. 176:1999;247.
5. Tsuchiya T., Miki O., Shimada K., Ohnishi M., Wakahara A., Yoshida A. J. Crystal Growth. 220:2000;185.
6. Lu H., Schaff W.J., Hwang J., Wu H., Koley G., Eastman L.F. Appl. Phys. Lett. 79:2001;1489.
7. Saito Y., Terauchi N., Suzuki A., Araki T., Nanishi Y. Jpn. J. Appl. Phys. 40:2001;L91.
8. Yodo T., Yona H., Ando H., Nosei D., Harada Y. Appl. Phys. Lett. 80:2002;968.
9. Higashiwaki M., Matsui T. Jpn. J. Appl. Phys. 41:2002;L540.