Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

Journal of Applied Physics

Volumn 88, Issue 1, 2000, Pages 183-187

  Grandjean, N ^a   Damilano, B ^a   Massies, J ^a   Neu, G ^a   Teissere, M ^a   Grzegory, I ^b   Porowski, S ^b   Gallart, M ^c   Lefebvre, P ^c   Gil, B ^c   Albrecht, M ^d  

^a CNRS   (France)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000113223     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373640     Document Type: Article

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