Electrical transport properties of p-GaN

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 3 A, 1996, Pages

  Nakayama, Hisashi ^a   Hacke, Peter ^a,b   Khan, Mohammad Rezaul Huque ^a,c   Detchprohm, Theeradetch ^a   Hiramatsu, Kazumasa ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c UNIVERSITY OF CHITTAGONG   (Bangladesh)

Author keywords

Activation energy; Carrier concentration; Conductivity; Fermi level; Fermi Dirac statistics; Hall coefficient; Mobility

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HALL EFFECT; MAGNESIUM; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

FERMI DIRAC STATISTICS; GALLIUM NITRIDE; HALL COEFFICIENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030110699     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l282     Document Type: Article

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