V/III ratio dependence of polarity of GaN grown on GaAs (111)A-Ga and (111)B-As surfaces by MOMBE

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 2, 2001, Pages 529-532

  Takahashi, O ^a   Nakayama, T ^a   Souda, R ^b   Hasegawa, F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035540214     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:2<529::AID-PSSB529>3.0.CO;2-6     Document Type: Article

References (8)

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