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Volumn 20, Issue 3, 2002, Pages 1217-1220
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Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ATOMIC FORCE MICROSCOPY;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
CRYSTAL IMPURITIES;
ELECTRONIC DENSITY OF STATES;
ETCHING;
FILM GROWTH;
HALL EFFECT;
HIGH TEMPERATURE EFFECTS;
ION BEAMS;
MOLECULAR BEAM EPITAXY;
SECONDARY ION MASS SPECTROMETRY;
SOLUTIONS;
SUBSTRATES;
SURFACE ROUGHNESS;
CRYSTAL POLARITY;
EPILAYERS;
GALLIUM NITRIDE;
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EID: 0035998579
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1463723 Document Type: Conference Paper |
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Times cited : (33)
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References (20)
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