Properties and applications of MBE grown AlGaN

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 212-218

  Stutzmann, M ^a   Ambacher, O ^a   Cros, A ^a   Brandt, M S ^a   Angerer, H ^a   Dimitrov, R ^a   Reinacher, N ^a   Metzger, T ^a   Hopler R ^a   Brunner, D ^a   Freudenberg, F ^a   Handschuh, R ^a   Deger, Ch ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

AlGaN; Molecular beam epitaxy; Properties

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; ENERGY GAP; FILM GROWTH; LIGHT TRANSMISSION; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

INTRINSIC PARAMAGNETIC DEFECTS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0000078844     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00165-7     Document Type: Article

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