Initial stages of InN thin film growth onto MgAl2O4(1 1 1) and α-Al2O3(0 0·1) substrates

Journal of Crystal Growth

Volumn 220, Issue 3, 2000, Pages 191-196

  Tsuchiya, Tohru ^a   Ohnishi, Masato ^a   Wakahara, Akihiro ^a   Yoshida, Akira ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; MAGNESIUM COMPOUNDS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THIN FILMS;

HIGH-QUALITY LAYERS;

SEMICONDUCTING FILMS;

EID: 0034501162     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00548-0     Document Type: Article

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