Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1641-1645

  Smith, A R ^a   Ramachandran, V ^a   Feenstra, R M ^a   Greve, D W ^b   Shin, M S ^b   Skowronski, M ^b   Neugebauer, J ^c   Northrup, J E ^d  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^d PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADLAYER STRUCTURES; FACE RECONSTRUCTION; FILM POLARITY; HIGH TEMPERATURE; NUCLEATION STAGES; ORDER DISORDER PHASE TRANSITIONS; ROOM TEMPERATURE; SUBMONOLAYER; TEMPERATURE RANGE; WURTZITE GAN;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ORDER DISORDER TRANSITIONS; REPAIR; SCANNING TUNNELING MICROSCOPY; ZINC SULFIDE;

FILM GROWTH;

EID: 75149145957     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581134     Document Type: Article

References (20)

1. M. M. Sung, J. Ahn, V. Bykov, J. W. Rabalais, D. D. Koleske, and A. E. Wickenden, Phys. Rev. B 54, 14 652 (1996).
2. M. A. Khan, J. N. Kuznia, D. T. Olson, and R. Kaplan, J. Appl. Phys. 73, 3108 (1993).
3. S. S. Dhesi, C. B. Stagarescu, K. E. Smith, D. Doppalapudi, R. Singh, and T. D. Moustakas, Phys. Rev. B 56, 10 271 (1997).
4. M. E. Lin, S. Strite, A. Agarwal, A. Salvador, G. L. Zhou, N. Teraguchi, A. Rockett, and H. Morkoç, Appl. Phys. Lett. 62, 702 (1993).
5. W. C. Hughes, W. H. Rowland, Jr., M. A. L. Johnson, S. Fujita, J. W. Cook, Jr., J. F. Schetzina, J. Ren, and J. A. Edmond, J. Vac. Sci. Technol. B 13, 1571 (1995).
6. K. Iwata, H. Asahi, S. J. Yu, K. Asami, K. Fujita, M. Fushida, and S.-I. Gonda, Jpn. J. Appl, Phys., Part 2 35, L289 (1996).
7. P. Hacke, G. Feuillet, H. Okumura, and S. Yoshida, Appl. Phys. Lett. 69, 2507 (1996).
8. W. S. Wong, N. Y. Li, H. K. Dong, F. Deng, S. S. Lau, C. W. Tu, J. Hays, S. Bidnyk, and J. J. Song, J. Cryst. Growth 164, 159 (1996).
9. R. J. Moinar, R. Singh, and T. D. Moustakas, J. Electron. Mater. 24, 275 (1995).
10. W. E. Packard, J. D. Dow, R. Nicolaides, K. Doverspike, and R. Kaplan, Superlattices Microstruct. 20, 145 (1996);
11. W. E. Packard, J. D. Dow, K. Doverspike, R. Kaplan, and R. Nicolaides, J. Mater. Res. 12, 646 (1997).
12. F. A. Ponce, D. P. Bour, W. T. Young, M, Saunders, and J. W. Steeds, Appl. Phys. Lett. 69, 337 (1996).
13. B. Daudin, J. L. Rouvière, and M. Arlery, Appl. Phys. Lett. 69, 2480 (1996);
14. J. L. Rouvière, M. Arlery, R. Niebuhr, K. H. Bachern, and Olivier Briot, MRS Internet J. Nitride Semicond. Res. 1, 33 (1996).
15. A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. Northrup, Phys. Rev. Lett. 79, 3934 (1997).
16. A. R, Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Appl, Phys. Lett. (in press).
17. M. Seelmann-Eggebert, J. L. Weyher, H. Obloh, H. Zimmermann, A. Rar, and S. Porowski, Appl. Phys. Lett. 71, 2635 (1997).
18. A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. Northrup, Appl. Phys. A (in press).
19. E. J. Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 82, 5472 (1997).
20. A. R. Smith, R. M. Feenstra, D. W. Greve, M. Shin, M. Skowronski, J. Neugebauer, and J. Northrup (unpublished).