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Applied Physics Letters

Volumn 81, Issue 7, 2002, Pages 1246-1248

Optical bandgap energy of wurtzite InN

(5) Matsuoka, Takashi a Okamoto, Hiroshi b Nakao, Masashi b Harima, Hiroshi c Kurimoto, Eiji d

a Bio Medical Informatics Research Center (Japan)

b NTT CORPORATION (Japan)

c KYOTO INSTITUTE OF TECHNOLOGY (Japan)

d OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; ABSORPTION EXPERIMENTS; CRYSTALLINITIES; GAN LAYERS; HIGH-POWER; INN FILMS; OPTICAL BAND GAP ENERGY; POLYCRYSTALLINE FILM; ROOM TEMPERATURE; SINGLE-CRYSTALLINE; WURTZITES;

GALLIUM NITRIDE; SINGLE CRYSTALS; X RAY DIFFRACTION; ZINC SULFIDE;

ENERGY GAP;

EID: 79955992797 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1499753 Document Type: Article

Times cited : (762)

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