Growth of high-quality cubic GaN on Si(0 0 1) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 44-50

  Wang, D ^a   Hiroyama, Y ^a   Tamura, M ^a   Ichikawa, M ^a   Yoshida, S ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACETYLENE; BAND STRUCTURE; CARBONIZATION; CERAMIC COATINGS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; STACKING FAULTS;

BUFFER LAYERS; GALLIUM NITRIDE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0033689684     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00430-9     Document Type: Article

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