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Volumn 83, Issue 23, 2003, Pages 4788-4790

Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy

(6) Bhuiyan, Ashraful Ghani a Sugita, Kenichi a Kasashima, Ken a Hashimoto, Akihiro a Yamamoto, Akio a,b Davydov, Valery Yu c

a UNIVERSITY OF FUKUI (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BONDS; ENERGY ABSORPTION; ENERGY GAP; FILM GROWTH; HALL EFFECT; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OXYGEN; POLYCRYSTALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ABSORPTION EDGES; BURSTEIN-MOSS SHIFT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0346936367 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1632038 Document Type: Article

Times cited : (100)

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11
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- to be published
- Ashraful G. Bhuiyan, T. Tanaka, K. Kasashima, A. Hashimoto, and A. Yamamoto, Jpn. J. Appl. Phys., Part 1 (to be published).
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