Structural defects and their relationship to nucleation of GaN thin films

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 475-486

  Qian, Weida ^a   Skowronski, Marek ^a   Rohrer, Greg S ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; GRAIN BOUNDARIES; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; NUCLEATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; GALLIUM NITRIDE; SCANNING FORCE MICROSCOPY;

SEMICONDUCTING FILMS;

EID: 0030404020     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (39)