Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 16, 2003, Pages

  Cao, G ^a,b   Xie, H ^a   Liu, Y ^a   Xu, H ^a   Ng, F ^a   Wu, S ^a   Tong, Y ^c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF PHYSICS   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; NITROGEN DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CRYSTALLIZATION; DENSITY; FILM; MOLECULAR DYNAMICS; SCANNING TUNNELING MICROSCOPY;

EID: 10644253563     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.161304     Document Type: Article

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