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Volumn 189-190, Issue , 1998, Pages 364-369

Analysis of MBE growth mode for GaN epilayers by RHEED

Author keywords

Cubic; GaN; Growth mode; Growth monitoring; Hexagonal; Oscillation; RHEED; Structure control

Indexed keywords

CRYSTAL ORIENTATION; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

EID: 18744422771     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00313-3     Document Type: Article
Times cited : (62)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.