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Volumn 189-190, Issue , 1998, Pages 364-369
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Analysis of MBE growth mode for GaN epilayers by RHEED
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Author keywords
Cubic; GaN; Growth mode; Growth monitoring; Hexagonal; Oscillation; RHEED; Structure control
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Indexed keywords
CRYSTAL ORIENTATION;
LOW TEMPERATURE EFFECTS;
MOLECULAR BEAM EPITAXY;
NITRIDES;
NITROGEN;
PLASMA APPLICATIONS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SAPPHIRE;
SEMICONDUCTOR GROWTH;
X RAY CRYSTALLOGRAPHY;
FLUX INTENSITY;
GROWTH MODES;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 18744422771
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00313-3 Document Type: Article |
Times cited : (62)
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References (12)
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